savantic semiconductor product specification silicon npn power transistors 2SC2331 d escription with to-220 package complement to type 2sa1008 low collector saturation voltage fast switching speed applications switching regulators dc-dc converters high frequency power amplifiers pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter 100 v v ceo collector- emitter voltage open base 100 v v ebo emitter-base voltage open collector 7 v i c collector current 2.0 a i cm collector current-peak 4.0 a i b base current 1.0 a t a =25 1.5 p t total power dissipation t c =25 15 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC2331 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =1.0a ,i b =0.1a,l=1mh 100 v v cesat collector-emitter saturation voltage i c =1a; i b =0.1a 0.6 v v besat base-emitter saturation voltage i c =1a ;i b =0.1a 1.5 v i cbo collector cut-off current v cb =100v; i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =0.1a ; v ce =5v 40 h fe-2 dc current gain i c =1a ; v ce =5v 40 200 switching times resistive load t on turn-on time 0.5 s t s storage time 1.5 s t f fall time i c =1.0a i b1 =- i b2 =0.1a r l =50 a ;v cc b 50v 0.5 s h fe-2 classifications m l k 40-80 60-120 100-200
savantic semiconductor product specification 3 silicon npn power transistors 2SC2331 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
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